Scientific Achievement
Electron microscopy shows the location of individual isoelectronic dopants in 2D Mo1-xWxSe2 as they change the carrier type from n- to non-degenerate p-type.
Significance and Impact
Visualizing dopants and understanding the resulting transport characteristics aids the development of building blocks for 2D optoelectronic devices.
Research Details
– Atomic-resolution HAADF scanning transmission electron microscopy revealed that isoelectronic substitution of W for Mo to give monolayer crystals of Mo1-xWxSe2 occurs during low-pressure chemical vapor deposition.
– The carrier type and transport characteristics of Mo1-xWxSe2 monolayers and vertically-stacked homojunctions were obtained from fabricated FET devices.
– The electronic structure of the alloy was examined by STM/STS and µ-XPS.
X. Li, et al. Adv. Mater. (2016) DOI: 10.1002/adma.201601991.
