Hf-Doped Ni-Al2O3 Interfaces at Equilibrium

Abstract

In this study, a series of dewetting experiments of pure and Hf-doped Ni films on sapphire and HfO2 substrates were conducted in order to measure the change in interface energy of the Ni-Al2O3 interface in the presence of Hf, and to study Hf interfacial segregation. It was found that Hf oxidizes under the conditions of the experiment (P(O2)=10-20atm.), and that the presence of HfO2 at the Ni-Al2O3 interface increases the interface energy from 2.16±0.2 to 2.7±0.4 [J/m2]. This result contradicts several theoretical studies that predict that Hf segregates to the interface to stabilize it thermodynamically. The solubility of Hf in bulk Ni was found to be significantly lower than the value reported in the equilibrium phase diagram.