Towards Fully Integrated High Temperature Wireless Sensors Using GaN-based HEMT Devices

Abstract

Wireless sensors which are capable of working at extreme environments can significantly improve the efficiency and performance of industrial processes by facilitating better control systems. GaN, a widely researched wide bandgap material, has the potential to be used both as a sensing material and to fabricate control electronics, making it a prime candidate for high temperature integrated wireless sensor fabrication. In this paper we are presenting an experimental study on AlGaN/GaN HEMT's performance at higher temperature (up to 300�C). From test results, DC and microwave parameters at different temperatures were extracted.