Study of thermal transport properties of β-SiC

Abstract

The thermal conductivity in Si and β-SiC with typical defects produced by radiation was investigated using molecular dynamics. It is shown that introduction of vacancies/voids in the perfect material leads to a significant reduction of thermal conductivity. The concentration dependence of thermal conductivity on the void concentration obtained is in reasonable agreement with existing experimental data. Through comparison of results obtained using molecular dynamics it was demonstrated that standard Debye-Callaway model can significantly underestimate phonon scattering on voids.