September 2015

Journal

Effect of proton irradiation energy on AlGaN/GaN metal-oxide semiconductor high electron mobility transistors

By:
Ahn, S.; Dong, C.; Zhu, W.; Kim, B.-j.; Hwang, Ya-Hsi; Ren, F.; Pearton, S.; Yang, Gwangseok; Kim, J.; Patrick, Erin; Tracy, Brian; Smith, David; Kravchenko, Ivan I
Journal Name:
Journal of Vacuum Science & Technology B
Page Number:
051208
Volume:
33
Issue Number:
5
Publication Date:
September 2, 2015
View DOI Listing:
https://doi.org/10.1116/1.4928730

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