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Local electron-beam excitation of graphene-backgated, hBN encapsulated, monolayer WS2 unlocks new methods for controlling and visualizing excitonic interactions in 2D materials.
Scientific Achievement: Discovered nanoscale exciton confinement in a monolayer 2D semiconductor induced by electron-beam patterning via an unconventional electrostatic gating effect.
Significance and Impact: Provides a pathway for precise, rewritable manipulation of quantum photonic devices, exciton routers, and analog quantum simulators.
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