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Schematic of underlayer growth of MoS₂ isotopic bilayer on SiO₂/Si. The bilayer contains AA′- and AB-stacked domains separated by an embedded twin boundary (highlighted in red) in bottom layer. A representative STEM image of a mirror-twin boundary with alternating 4|8 ring motif is shown below.
Scientific Achievement: Mo isotope labeling and molecular dynamics (MD) calculations revealed how vdW interactions with the substrate control the synthesis pathway of bilayer MoS2 – driving underlayer growth on SiO2/Si but overlayer growth on sapphire.
Significance and Impact: Work provides mechanistic insight into confined epitaxial growth and establishes isotope labeling as a powerful probe of 2D materials synthesis.
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