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Schematic showing how atomic-scale steps in Al2O3 control Bi2Se3 growth and reveal new atomic-scale structures.
Scientific Achievement: Understanding how Bi2Se3 bonds to 1D atomic scale steps enables growth of single-domain topological insulator films without twin defects.
Significance and Impact: This work demonstrates a simple, scalable method to improve the growth of topological insulators and other two-dimensional materials for quantum and electronic applications.
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