Superlattice-like stacking fault array in ion-irradiated GaN

Abstract

Controlling defects in crystalline solids is of technological importance for realizing desirable materials properties. Irradiation with energetic particles is useful for designing the spatial distribution and concentration of defects in materials. Here, we performed ion irradiation into hexagonal GaN with the wurtzite structure and demonstrated the spontaneous formation of superlattice-like stacking fault arrays. It was found that the modulation period can be controlled by irradiation conditions and post-irradiation heat treatments.