Zinc Magnesium Oxide: An Emerging Material for Highly Sensitive Devices

Zinc Magnesium Oxide: An Emerging Material for Highly Sensitive Devices


  • Punam Murkute, Indian Institute of Technology , Bombay
January 15, 2019 - 10:00am to 11:00am


The speaker will discuss research that was carried out to determine whether zinc magnesium oxide would be superior to zinc oxide in oxide-based semiconductor applications, in terms of optical, structural, and elemental properties. A cost-effective radio-frequency sputtering technique was employed to form high-quality Zn1–xMgxO thin films. The thin films underwent annealing to further improve their optoelectrical and structural properties. The optimized thin films underwent a unique, low-cost hydrothermal bath process, which produced high-quality Zn1–xMgxO nanorods that are suitable for various device applications. A photodetector and a humidity sensor based on the nanorods were tested. A peak responsivity of 62.19 A/W at about 350 nm attributed to a near-band-edge emission peak was measured from the photodetector (a three-order enhancement in detectivity values over ZnO). AC-based impedance measurement of the humidity sensor registered high sensitivity of 1.50% for changes in relative humidity. The humidity sensor demonstrated better linearity with relative humidity in terms of current, sensitivity, repeatability, and area of operability.

Sponsoring Organization 

Center for Nanophase Materials Sciences


  • High Temperature Materials Laboratory
  • Building: 4515
  • Room: 265

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