Block Copolymers for High-Resolution Patterning Applications

Block Copolymers for High-Resolution Patterning Applications


  • Grant Willson, The University of Texas, Austin
November 3, 2017 - 11:00am to 12:00pm


A series of silicon-containing block copolymers has been designed, synthesized, and evaluated for use in high-resolution lithography. The goal of this work is to enable efficient production of patterns with minimum features less than 10 nm in width. Incorporation of silicon into one of the blocks enables very high etch contrast between the blocks under both oxidizing and reducing conditions, which enables production of high-aspect-ratio, high-resolution patterns. The orientation of the lamellae in the polymers is not naturally perpendicular to the substrate, so a method was developed to enable their orientation.

Many new polymers were synthesized and auditioned, and the study has now produced materials that enable directed self-assembly of lamellae with 50 Å lines and spaces. Etch processes have been developed that enable selective removal of the hydrocarbon block in these structures to provide high-aspect-ratio patterns that can be transferred into useful substrate materials, including metals and spin-on carbon. Work continues toward developing new materials and processes to support demonstration of a 40 Å patterning process.

Additional Information 

About the Speaker:

Dr. Grant Willson is the Rashid Engineering Regents Chair at the University of Texas at Austin.

Sponsoring Organization 

Center for Nanophase Materials Sciences


  • Weinberg Auditorium
  • Building: 4500-N
  • Room: I-126

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