Paul Kent
Publications By Subject
Nitrides
Nitrides
Publications on nitride systems, e.g., GaN, GaAsN. There is also a complete list of publications.
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“Effects of N Incorporation on the Structural and Photoluminescence Characteristics of GaSbN/GaSb Single Quantum Wells”. S. Iyer, L. Wu, J. Li, S. Potoczny, K. Matney, and P. R. C. Kent.
Journal of Applied Physics 101 113508 (2007).
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“Penetration of electronic perturbations of dilute nitrogen impurities deep into the conduction band of GaPN”. S. V. Dudiy, P. R. C. Kent, and Alex Zunger.
Physical Review B (Rapid Communications) 70 161304 (R) (2004).
Adobe PDF [66KB].
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“Electronic structure evolution of dilute III-V nitride alloys”. P. R. C. Kent.
Invited book chapter in "Dilute Nitride (III-N-V) Semiconductors: Physics and Technology", Elsevier (2004).
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“An atomistic view of the electronic structure of mixed anion III-V nitrides”. P. R. C. Kent and Alex Zunger.
Invited book chapter in "Physics and Applications of Dilute Nitrides", Taylor and Francis (2004).
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“Failure of nitrogen cluster states to emerge into the bandgap of GaAsN with application of pressure”. P. R. C. Kent and Alex Zunger.
Applied Physics Letters 82 559 (2002).
Adobe PDF [87KB].
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“Electron and Hole Confinement in GaInN/GaN and AlGaN/GaN Quantum Wells”. A. Hangleiter, S. Lahmann, C. Netzel, U. Rossow, P. R. C. Kent, and Alex Zunger.
GaN and Related Alloys 2001 (Materials Research Society Symposium Procedings) 693 I7.2 (2002).
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“Biaxial strain-modified valence and conduction band offsets of zinc-blende GaN, GaP, GaAs, InN, InP, and InAs, and optical bowing of strained epitaxial InGaN alloys”. P. R. C. Kent, Gus L. W. Hart, and Alex Zunger.
Appled Physics Letters 81 4377 (2002).
Adobe PDF [67KB].
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“Pseudopotential theory of dilute III-V nitrides”. P. R. C. Kent, L. Bellaiche, and Alex Zunger.
Semiconductor Science and Technology 17 851 (2002).
Adobe PDF [207KB].
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“Evolution of Electron States with Composition in GaAsN Alloys”. P. R. C. Kent and A. Zunger.
Physica Status Solidi (b) 228 253 (2001).
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“Nitrogen pairs, triplets, and clusters in GaAs and GaP”. P. R. C. Kent and Alex Zunger.
Applied Physics Letters 79 2339 (2001).
Adobe PDF [230KB].
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“Theory of electronic structure evolution in GaAsN and GaPN alloys”. P. R. C. Kent and Alex Zunger.
Physical Review B 64 115208 (2001).
Adobe PDF [1MB].
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“Carrier localization and the origin of luminescence in cubic InGaN alloys”. P. R. C. Kent and Alex Zunger.
Applied Physics Letters 79 1977 (2001).
Adobe PDF [257KB].
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“Evolution of III-V Nitride Alloy Electronic Structure: The Localized to Delocalized Transition”. P. R. C. Kent and Alex Zunger.
Physical Review Letters 86 2613 (2001).
Adobe PDF [201KB].
http://www.ornl.gov/~pk7/publicationsbysubject/nitrides.html
Comments, questions? Contact Paul Kent.Last updated Thursday 16 August 2007