Publications
One publication
Semiconductor Science and Technology 17 851 (2002)
We review the empirical pseudopotential method and its recent applications to the III–V nitride alloys GaAsN, GaPN, GaInAsN and GaAsPN. We discuss how studies using this method have provided an explanation for many experimentally observed anomalous nitride phenomena, including sharp photoluminescence lines in dilute alloys, high effective masses, Stoke's shift between emission and absorption in higher concentration alloys for GaAsN and GaPN ternaries. We also discuss predictions of unusual effects that remain to be experimentally discovered in GaInAsN quaternaries and complex GaAsPN solid solutions.
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