GaN and Related Alloys 2001 (Materials Research Society Symposium Procedings) 693 I7.2 (2002)
We show that the strong bowing of the bandgap of GaInN, which is primarily due to bowing of the valence band edge, translates into a strongly composition dependent ratio of the conduction band offset to the valence band offset with respect to GaN. For common In mole fractions of 0-20% this leads to a reversal of the band offset ratio and to very weak electron confinement. This theoretical picture is verified by comparing the results of time-resolved spectroscopy on asymmetric AlGaN/GaInN/GaN and AlGaN/GaN/AlGaN quantum wells. Since electron confinement is much stronger for GaN/AlGaN wells than for GaInN/GaN wells, the effect of asymmetry is very weak for the former and fairly strong for the latter.
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