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An atomistic view of the electronic structure of mixed anion III-V nitrides

P. R. C. Kent and Alex Zunger

Invited book chapter in "Physics and Applications of Dilute Nitrides", Taylor and Francis (2004)

Available from Amazon.

Book description from Taylor & Francis:

Since their development in the 1990s, it has been discovered that dilute nitrides have intriguing properties that are not only distinct from those of conventional semiconductor materials, but also are conducive to various applications in optoelectronics and photonics. The book examines these applications and presents a broad and in-depth look at the basic electronic and optical properties of diluted nitrides.

The aim of Physics and Applications of Dilute Nitrides is to provides graduate students, researchers and engineers with a comprehensive overview of the present knowledge and future perspectives of dilute nitrides.

Co-authored by a group of leading scientists in the field, this book brings the reader up to speed on the development and current state of dilute nitride applications, as well as the technologies to be developed in the near future.

Contents:

1. An atomistic view of the electronic structure of mixed anion III-V nitrides.

2. Band anticrossing in III-N-V alloys: theory and experiments.

3. Tight-binding and k.p theory of dilute nitride alloys.

4. Electron Effective Masses of Dilute Nitrides: Experiment.

5. Electronic properties of (Ga,In)(N,As)-based heterostructures.

6. Raman Scattering in Dilute GaAsN and GaPN Alloys.

7. Theory of Defects in Dilute Nitrides.

8. Recombination Processes in Dilute Nitrides.

9. Growth, characterization, and bandgap engineering of dilute nitrides.

10. GaInNAs long wavelength lasers for 1.3 mm applications.

11. Recombination Processes in GaInNAs Long-wavelength Lasers.

12. Photovoltaics applications of dilute nitrides.

13. Long Wavelength Dilute Nitride Lasers.

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Comments, questions? Contact Paul Kent. Last updated Tuesday 26 July 2005.