Roll to Roll Processing
Low Cost Production of InGaN for Next-generation Photovoltaic Devices
Recent work at Cornell University has shown that the bandgap of the InN-GaN system can be tailored to span the entire solar spectrum. This work opens the possibility to fabricate multi-junction solar cells from a single material system, enabling a low-cost route to high-efficiency multi-junction solar cells with efficiency improvements of over 100%. However, materials growth issues and the high cost of the production technology, such as molecular beam epitaxy (MBE) or metal organic chemical vapor deposition (MOCVD) have impeded implementation. This project will support Structured Materials Industries, Inc. in their effort to develop a low-cost process called hydride organo-metallic vapor phase epitaxy (HOVPE) for the production of InGaN semiconductor materials for use in high efficiency photovoltaic systems.
In this effort, SMI, Cornell University and Oak Ridge National Laboratory will evaluate a new hybrid hydride organo-metallic vapor phase epitaxy (HOVPE) system that has the potential have a low cost-of-ownership (COO) and to produce InGaN layers of sufficient material quality for high-efficiency solar cells. ORNL will be primarily responsible for the structural, chemical, and electrical characterization of the materials fabricated using the novel HOVPE process. ORNL will characterize the materials using electron microscopy and x-ray/neutron scattering techniques as is appropriate. Of particular interest is the homogeneity of the structure and chemistry of the materials deposited using the novel process. Basic PV characteristics of the material will also be evaluated. The development of large-scale, low-cost, production of the material will be paramount to this development process.