Thin Film Deposition

ORNL scientists are developing advanced thin film materials using Plasma Enhanced Chemical Vapor Deposition (PECVD). High density plasma sources are used to enhance the PECVD process by producing copious quantities of reactive atomic species, such as atomic hydrogen, nitrogen, or oxygen. Our approach has been used to produce high quality thin films of tantalum oxide, silicon nitride, polycrystalline silicon, boron nitride, and carbon nanotubes. The relationship between thin film quality and process plasma properties is established by using RF impedance analysis, optical emission spectroscopy, and mass spectroscopy.

Papers High Density Plasma Enhanced CVD of Polysilicon Thin Films Dielectric Properties of Silicon Nitride Deposited by High Density Plasma Enhanced Chemical Vapor Deposition Optical Properties of Tantalum Oxide Films Produced by High Density Plasma Enhanced Chemical Vapor Deposition

ORNL  Fusion Home Page   Fusion Technology and Science Applications