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An ORNL theorist helped Chinese scientists understand on a molecular scale why a physically altered organic film shows potential for high-density data storage.

A Disrupted Organic Film:
Could Memories Be Made of This?

For the first time, Chinese scientists have shown that nanometer-sized dots of information can be written on a thin film and erased. The work suggests that an organic film, altered electrically to create such dots, could hold a million times more data than a CD-ROM. Calculations by Karl Sohlberg, a theoretical chemist in ORNL's Solid State Division, have enhanced the understanding of the mechanism behind this discovery. The results of the collaborative research, which also involved the University of Chicago, were published in the February 21, 2000, issue of Physical Review Letters.

In August 1997, Hongjun Gao, then with the Beijing Laboratory for Vacuum Physics, came to ORNL's Solid State Division (SSD) as a guest scientist. He wanted to both use the division's state-of-the-art microscopes and tap SSD expertise. Gao and his Chinese colleagues had discovered that by exposing an organic film on a graphite substrate to voltage pulses from a scanning tunneling microscope (STM), tiny regions, or "nano-dots," of the non-conductive film become electrically conductive.

Gao told SSD's Steve Pennycook and Sohlberg that when a voltage was applied to a perfect crystalline film on graphite, virtually no electrical current was measured because of the film's high resistivity. But after the film was exposed to positive voltage pulses, it became conductive. Gao was interested in determining the changes at the molecular level that altered the film's electrical properties.

Sohlberg, who was Gao's office mate at ORNL, made calculations and used infrared spectra and other data from various experiments conducted on the organic films at the Beijing lab to make this determination. "We were trying to test hypotheses suggested by the experimental results and the scientific literature," he says. "That way we hoped to arrive at the correct explanation."

The researchers ruled out several suggested explanations for the conductivity of the altered film, including the buildup of static electricity and the burning of a hole through the film to the electrically conductive graphite base.

"Then we got an insight from another experiment carried out in the Beijing lab," Sohlberg says. "Occasionally, the Chinese scientists would deposit a film at too fast a rate. When they characterized one such film, they found it was amorphous rather than crystalline like the good film. They also observed that the disordered film was as conductive as the crystalline film altered by voltage pulses."

This correlation suggested that the nanodots are actually tiny regions of "local disorder" in the otherwise well-ordered film and that their amorphous nature makes the film conductive. At Beijing, says Sohlberg, the "nail in the coffin" experiment was done to verify this prediction and close the case on why altered crystalline films become conductive.

STM images of an organic film on graphite
STM images of an organic film on graphite. (a) An image of the film surface showing crystalline order; (b) an array of nanodots formed by positive voltage pulses; (c) an "A" pattern formed by voltage pulses; (d) and (e) STM images after erasing marks one at a time using negative voltage pulses; (f) resolution test using voltage pulses (the distance between neighboring dots is 1.7 nanometers).

Pennycook suggested that a thin-film data storage device would be more marketable if data could be erased as well as written on it. So, the Beijing group did some experiments and found that subjecting the nanodots to negative voltage pulses restored them to the nonconductive state. This was the first demonstration of writing and erasing information at or near the single-molecule limit.

In March 2000, Gao left ORNL to become a group leader in the Beijing Laboratory for Vacuum Physics. Sohlberg says that Gao's laboratory will be trying to meet the challenges of making a commercial high-data-density thin-film storage device. In such a device, a conductive nanodot could represent a "1" bit and nonconductive regions could be "0" bits.

"A massively parallel device must be built to read so much stored information at an acceptable speed," Sohlberg says. "In addition, the altered organic materials must be made more stable and durable."

Gao thinks it may be possible to connect the conductive dots, sandwich them in glass, and pack these nanosized circuits in microchips to produce computers that are 10 times smaller and faster. One way or another, because of the growing ability to control their properties on the nanometer scale, organic films may change the big picture for computing technologies.

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